Semiconductor innovator FMC has secured €100 million to scale its breakthrough memory technologies and introduce a new generation of ultra-efficient chips designed for AI and high-performance computing.
The raise includes €77 million in equity from an oversubscribed Series C round, supported by both existing and new deep-tech investors—making it one of Europe’s largest semiconductor fundraising rounds. An additional €23 million comes from public programs, including IPCEI ME/CT and the European Innovation Council (EIC).
Europe Enters a Strategic Memory Market Dominated by Global Giants
Memory chips are one of the most critical components in modern computing, yet global leadership has been held by South Korea, the US, and Taiwan, with China advancing quickly. Europe has had virtually no presence—until now.
Based in Silicon Saxony, FMC is positioning itself as Europe’s first serious competitor in advanced memory, closing a major strategic gap in the continent’s semiconductor capabilities.
A New Class of Memory Based on Hafnium Oxide
FMC has developed an entirely new category of memory using hafnium oxide, enabling its DRAM+ technology to be:
- More sustainable
- Significantly faster
- Much more energy-efficient
- More cost-effective
Its dramatically lower power consumption could reduce the massive energy requirements of AI data centers—one of the sector’s biggest constraints.
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“Energy Efficiency Is the New Metric for AI”
FMC CEO Thomas Rückes says the company is now developing next-generation chips and system solutions that outperform today’s industry standards:
“Bandwidth has been the dominant metric in AI compute. Now, energy efficiency is becoming the key factor for the next generation of AI.”
He highlights that memory—not compute—is the true bottleneck in AI infrastructure:
“Our DRAM+ and 3D-CACHE+ directly solve this problem. They’re faster and far more energy-efficient than existing products. This funding validates the global importance of our technology.”
Backed by Leading Deep-Tech Investors
The equity round was led by:
- HV Capital
- DeepTech & Climate Fonds (DTCF)
- Vsquared Ventures
Returning investors include eCAPITAL, Bosch Ventures, Air Liquide Venture Capital, M Ventures (Merck), and Verve Ventures.
HV Capital partner Fabian Gruner commented:
“FMC’s memory technology is unique and has the potential to redefine global industry standards.”
Unlocking Massive Energy Savings for AI and HPC
AI data centers are expected to consume an increasingly large share of global electricity in coming years.
FMC’s persistent DRAM+ and 3D-CACHE+ technologies can dramatically reduce this energy load by:
- Minimizing data transfers between memory hierarchies
- Eliminating reliance on slow, non-volatile storage
- Enabling significantly higher system throughput
These improvements can more than double system efficiency for databases and considerably accelerate energy-efficient AI workloads.
Commercialization and Global Expansion
FMC is partnering with major DRAM makers and advanced logic foundries to deliver its DRAM+ and 3D-CACHE+ products through high-volume 300mm fabs worldwide. Its architecture also has the potential to achieve higher memory densities than today’s dominant solutions.
The €100 million infusion will speed up product commercialization and support FMC’s international expansion.
About Ferroelectric Memory Company (FMC)
FMC develops next-generation memory solutions using ferroelectric hafnium oxide technology. Its DRAM+ and 3D-CACHE+ products deliver unprecedented energy efficiency, speed, and scalability for AI, IoT, and high-performance computing applications—providing a modern alternative to outdated embedded memory technologies.
